On August 15th, the “Zhi” Mobility and Industry 4.0 Forum, hosted by Aspencore and co-organized by Chengdu Electronic Information Industry Association and Chengdu Sipower Technology Co., Ltd., was held at Chengdu Dongda Mingyu Haoya Hotel. Dr. Luo Peng, the technical director of Chengdu Danxi Technology, gave a speech at the forum on the theme of “The Third Generation Semiconductor Gallium Nitride Technology Development Trend and Application Market”.

Aspencore is the largest media in the global electronics arena. This “Zhi” and Industry 4.0 Forum provides an opportunity for relevant companies, institutions and individuals to share more hot technical topics in Smart Factory and Industry 4.0. The forum has three sub-meetings in Shenzhen, Suzhou and Chengdu.

Bluetooth Technology Alliance Asia Pacific Senior Developer Relations Manager Ren Kai, HIROSE Technology Manager Li Yulan, Winbond Flash Product Planning Manager Huang Xinwei, Silicon Labs China Sales Manager Liu Peizhi, BISTel China Sales Vice President Stanley Shi, ST Power  Separation Devices Marketing Manager Li Honghua Sigfox Global Ecology Chain Coordinator Yan Gengzhen, Semtech Southwestern Account Manager Wu Xiaojian, Wei Shitong Research Associate Dean Ren Fei, Oracle Senior Solution Architect Vicky Qiu and the technical director of Chengdu Danxi Technology Luo Peng gave lectures on artificial intelligence and industry 4.0 related knowledge from different perspectives.

Chengdu Danxi Technology Co., Ltd. Was established in the Sipower technology incubator. It specializes in companies that provide gallium nitride (GaN) power semiconductor device technology and application solutions. It is the main organization for the establishment of power semiconductor research and the establishment of new materials power semiconductor research. Danxi Technology has a research and development team consisting of returned overseas students. With the support and cooperation of Sipower Incubator's comprehensive and high-quality service support resources and the University of Electronic Science and Technology University Power Integration Technology Laboratory, the company's goal of developing the first independent GaN Power IC in China will be completed in the short term, and it is determined to become the most influential new material in China. Power device research and development company.Based on the company's existing resources and market needs, Nitrogen Technology will focus on three areas of GaN-based mobile phone fast charging, in-vehicle charging (OBC) and 5G RF and application solutions.

Luo Peng, Master of Electrical Engineering, Brandenburg University of Technology, Germany, Ph.D. and Postdoctoral Fellow, RF Microelectronics, Ferdinand Brown-Leibnitz Institute, Berlin, Germany. He is responsible for the construction of GaN transistor test platforms, GaN transistor modeling and the design of millimeter-wave low-noise power amplifiers. Has more than 5 years of experience in research and development of third-generation semiconductor GaN devices He has served as a reviewer of the IEEE Microwave Theory and Technology Journal, and has been involved in the management of research and development projects of several German research foundations. He is currently the founder and technical director of Chengdu Nitrogen Technology Co., Ltd.

In his speech, Dr. Luo Peng pointed out that the third-generation semiconductor, also known as wide-bandgap semiconductors, mainly refers to gallium nitride GaN and silicon carbide SiC), which has the advantage of being compared with the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide. GaAs has higher saturation electron velocity, high frequency characteristics (millimeter wave) and high power density. Although the P-type grid structure is difficult to manufacture, it is still preferred by many research institutions and companies such as FBH, innoscience， San'an Integrated Circuit Co., Ltd., and EPC because of its good performance. The cascode connection structure was developed by Transphorm. It features a series 30V MOSFET with a threshold voltage of 2V and is compatible with Si device drivers. The insulated gate structure, also known as the recessed gate structure, intercepts the 2DEG below the gate through the recess and remains off at 0V.

Dr. Luo Peng also introduced the development history of GaN power devices. He pointed out that 2010 is the breakthrough year for GaN power devices.

Dr. Luo Peng also introduced the development history of GaN power devices. He pointed out that 2010 is a year in which GaN power devices began to be used. In this year, EPC released 20-200V eGaN, MicroGaN released 600V eGaN, and then in 2011, GaN System released 1200V GaN-on-SiC. In 2012, 6-inch GaN-on-SiC chip was put into use, until today 6 Inch GaN-on-SiC is still the mainstream of GaN power devices. In 2014, GaN devices were successfully grown on 8-inch SiC. This has improved the performance of GaN devices. However, due to the high hardness of SiC, the yield of 8-inch SIC GaN devices is low. This situation has continued for two years, 2016. In the year, 8-inch GaN devices (GaN-on-Si) were successfully mass-produced, and China also produced 8-inch GaN-on-Si in 2018.

Dr. Luo Peng pointed out that GaN semiconductors are widely used in the fields of optoelectronics, microwave radio frequency and power electronics because of their superior performance. In the field of power electronics, because of its small loss, low heat generation, high switching frequency, small size, and high power density, potassium nitride devices have been widely used in products such as fast charging and car chargers. Authorities predict that the third-generation semiconductor power device market will exceed $10 billion by 2027. In the field of microwave radio frequency, potassium nitride power devices have the advantages of high frequency, wide bandwidth and high output power density. GaN devices can be used in RF PA, LNA, and RF front-end devices in telecom base stations. It is predicted that by 2023, the market demand for GaN power devices will reach $1.3 billion. The institutions and enterprises that develop GaN devices substrate worldwide have Sumitomo Group, Mitsubishi Group, Furukawa electric, Cree. The institutions and enterprises that develop GaN devices substrate have Suzhou Nanowin Science and Technology Co., Ltd, Sino Nitride, San’an Optoelectronics CO., Ltd in China. In the manufacturing process, there are Cyclelink Intl, Fujitsu Limited, Win Semiconductors, EPI and TSMC in the world. And Xiamen Sanan Integrated Circuit Co., Ltd. in China. In the design process, there are EPC，MACOM，TI，Dialog，NAVITAS in the world, and Ampleon, Danxi Technology in China. IDM companies have Sumitomo Group, Exagan , STMicroelectronics, NXP Semiconductors, Infineon, Mitsubishi Group, QORVO and CREE in the world, and Dynax, CETC13, CETC55, innoscience(Zhuhai) in China.

More than 20 companies including SYDTEK, Emtronix, Siemens Ltd. China, Chengdu Branch and Sichuan Longniao Intelligent Transportation Technology Co., Ltd. participated in the forum.

The event was supported by the Chengdu Science and Technology Bureau.